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BYT86
Vishay Telefunken
Ultra Fast Recovery Silicon Power Rectifier
Features
D D D D D
Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time
14282
Applications
Fast rectifiers in S.M.P.S, freewheeling and snubber diode in motor control circuits
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Test Conditions Type Symbol BYT86-600 VR=VRRM BYT86-800 VR=VRRM BYT86-1000 VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 600 800 1000 90 25 8 -55...+150 Unit V V V A A A C
tp= 10ms half sinewave
Maximum Thermal Resistance
Tj = 25_C Parameter Junction case Test Conditions Symbol RthJC Value 2.4 Unit K/W
Document Number 86036 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BYT86
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage g Reverse current Forward recovery time Turn on transient peak voltage Reverse recovery y characteristics Reverse recovery time y Test Conditions IF=8A IF=8A, Tj=100C VR=VRRM VR=VRRM, Tj=100C IF=8A, diF/dtx50A/ms , m IF=8A, diF/dt =-100A/ms, VBatt=200V m IF=8A, diF/dt =-100A/ms, VBatt=200V IF=0.5A, IR=1A, iR=0.25A Type Symbol Min Typ Max Unit VF 1.8 V VF 1.8 V IR 10 mA IR 0.2 mA tfr 350 ns VFP 7 V IRM tIRM trr trr 12 110 150 80 A ns ns ns
Characteristics (Tj = 25_C unless otherwise specified)
1000 I R - Reverse Current ( mA ) IF - Forward Current ( A ) VR = VR RM 100 100 TCase= 25C 10
10
1
1
0.1
0.1 0
94 9483
0.01 40 80 120 160 200
94 9482
0
0.6
1.2
1.8
2.4
3.0
Tj - Junction Temperature ( C )
VF - Forward Voltage ( V )
Figure 1. Typ. Reverse Current vs. Junction Temperature
10 I FAV- Average Forward Current ( A )
Figure 3. Typ. Forward Current vs. Forward Voltage
t IRM - Reverse Recovery Time for IRM ( ns ) 150
8 6 RthJA=5K/W RthJC=2.4K/W
120
90
4 RthJA=10K/W 2 RthJA=85K/W 0 0 40 80 120 160 200
60 30 0 0 50 100 150 200 -dIF/dt - Forward Current Rate of Change ( A/ms ) IF = 8A TC=25C VBatt=200V
94 9481
Tamb - Ambient Temperature ( C )
94 9484
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Reverse Recovery Time for IRM vs. Forward Current Rate of Change
www.vishay.de * FaxBack +1-408-970-5600 2 (4)
Document Number 86036 Rev. 2, 24-Jun-98
BYT86
Vishay Telefunken
15 IRM - Reverse Recovery Current ( A ) t rr - Reverse Recovery Time ( ns ) 250
12
200
9
150
6 3 0 0 50 100 150 200 IF = 8A TC=25C VBatt=200V
100 50 0 0 50 100 150 200 IF = 8A TC=25C VBatt=200V
94 9485
-dIF/dt - Forward Current Rate of Change ( A/ms )
94 9486
-dIF/dt - Forward Current Rate of Change ( A/ms )
Figure 5. Reverse Recovery Current vs. Forward Current Rate of Change
Figure 6. Reverse Recovery Time vs. Forward Current Rate of Change
Dimensions in mm
14276
Document Number 86036 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BYT86
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 86036 Rev. 2, 24-Jun-98

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